发明名称 |
Reduction of etch-rate drift in HDP processes |
摘要 |
A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 Å is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.
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申请公布号 |
US7867921(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080204503 |
申请日期 |
2008.09.04 |
申请人 |
APPLIED MATERIALS, INC. |
发明人 |
WANG ANCHUAN;LEE YOUNG S.;VELLAIKAL MANOJ;BLOKING JASON THOMAS;JEON JIN HO;MUNGEKAR HEMANT P. |
分类号 |
H01L21/31;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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