MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method is provided to improve the reliability of a thin film transistor by forming an oxide insulating layer on an oxide semiconductor layer and increasing the resistance of the oxide semiconductor layer. CONSTITUTION: An insulating layer(402) is formed on the upper side(400) of a substrate. A dehydration or dehydrogenation process is executed in the insulating layer. An oxide semiconductor layer(403) is formed on the insulating layer. The dehydration or dehydrogenation process is executed in the oxide semiconductor layer. A source electrode layer(405a) and a drain electrode layer(405b) are formed on the oxide semiconductor layer. An oxide insulation layer(407), which is contacted with a part of the oxide semiconductor layer, is formed.