发明名称 SEMICODUCTOR MEMORY DEVICE FOR REDUCING CURRENT AT PASR MODE
摘要 PURPOSE: A semiconductor memory device is provided to reduce the size of a parity bank by using parity data only for a region where a self-refresh process is executed. CONSTITUTION: A plurality of banks(11) include at least one block. At least one parity bank includes a plurality of parity memory cells. A refresh part generates a refresh address in order to execute the self-refresh operation of a plurality of memory cells. An error code generating and correcting part(30) generates the error correction code of data applied from the outside and saves the error correction code in the parity memory cell.
申请公布号 KR20110003197(A) 申请公布日期 2011.01.11
申请号 KR20090060842 申请日期 2009.07.03
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 SEO, EUN SUNG
分类号 G11C11/402;G11C11/403;G11C11/4063 主分类号 G11C11/402
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