FABRICATING METHOD OF EMBEDDED FLASH MEMORY DEVICE

摘要

PURPOSE: An embedded flash memory device manufacturing method is provided to prevent the misaligning occurring during the formation of a gate of a memory transistor using blanket poly etching method. CONSTITUTION: An oxide film and a nitride film are successively formed on a substrate(100). The nitride film is etched to form a fence nitride film(120a). A memory gate electrode(140a) is formed by implementing the blanket etch process on the poly silicon. A gate length can be controlled and the misaligning is prevented by blank etching the poly silicon without a photomask.