发明名称 |
Semiconductor device with epitaxial C49-titanium silicide (TiSi2) layer and method for fabricating the same |
摘要 |
The present invention relates to a semiconductor device with an epitaxially grown titanium silicide layer having a phase of C49 and a method for fabricating the same. This titanium silicide layer has a predetermined interfacial energy that does not transform the phase of the titanium layer, and thus, occurrences of agglomeration of the titanium layer and a grooving phenomenon can be prevented. The semiconductor device includes: a silicon layer; an insulation layer formed on the silicon layer, wherein a partial portion of the insulation layer is opened to form a contact hole exposing a partial portion of the silicon layer; an epitaxially grown titanium silicide layer having a phase of C49 and formed on the exposed silicon substrate disposed within the contact hole; and a metal layer formed on an upper surface of the titanium silicide layer.
|
申请公布号 |
US7868458(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080316766 |
申请日期 |
2008.12.16 |
申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE MOON-KEUN;LEE TAE-KWON;YANG JUN-MO;PARK TAE-SU;LEE YOON-JIK |
分类号 |
C23C14/06;H01L23/48;C23C14/58;C23C16/42;H01L21/24;H01L21/28;H01L21/285;H01L21/336;H01L21/768;H01L29/45 |
主分类号 |
C23C14/06 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|