Modulation doped super-lattice sub-collector for high-performance HBTs and BJTs

摘要

A bipolar junction transistor having an emitter, a base, and a collector includes a stack of one or more layer sets adjacent the collector. Each layer set includes a first material having a first band gap, wherein the first material is highly doped, and a second material having a second band gap narrower than the first band gap, wherein the second material is at most lightly doped.