发明名称 |
Dynamic type semiconductor memory device and operation method of the same |
摘要 |
A dynamic type semiconductor memory device includes a sense amplifier connected with a bit line pair to amplify and sense a voltage difference on the bit line pair; a precharge circuit configured to precharge the bit line pair to a power supply voltage on a lower side in response to a first control signal; a memory cell capacitance having one end which is connected with the bit line pair through a first switch circuit which is controlled in response to a signal on a word line; and a reference cell capacitance having one end which is connected with the bit line pair through a second switch circuit which is controlled in response to a signal on a reference word line. The other end of the memory cell capacitance and the other end of the reference cell capacitance are electrically separated.
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申请公布号 |
US7869292(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20090502692 |
申请日期 |
2009.07.14 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
YANO NOBUMITSU;TANABE SHOGO |
分类号 |
G11C7/00 |
主分类号 |
G11C7/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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