发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PURPOSE: A semiconductor memory device is provided to prevent the fuse from eroding by reducing the voltage difference between the fuse and the nearby guard ring. CONSTITUTION: One side of a fuse(f) is connected to a repair node(a). A pull down unit selectively transfers the ground voltage by the voltage of repair node. A pull up unit selectively transfers the driving voltage to the other side of the fuse. A depressurizing unit(30) is arranged between the pull up unit and the fuse to lower the voltage level of the driving voltage.
申请公布号 KR20110003051(A) 申请公布日期 2011.01.11
申请号 KR20090060641 申请日期 2009.07.03
申请人 HYNIX SEMICONDUCTOR INC. 发明人 CHANG, TAE SIG
分类号 H01L21/82;G11C29/04 主分类号 H01L21/82
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