摘要 |
PURPOSE: A semiconductor memory device is provided to prevent the fuse from eroding by reducing the voltage difference between the fuse and the nearby guard ring. CONSTITUTION: One side of a fuse(f) is connected to a repair node(a). A pull down unit selectively transfers the ground voltage by the voltage of repair node. A pull up unit selectively transfers the driving voltage to the other side of the fuse. A depressurizing unit(30) is arranged between the pull up unit and the fuse to lower the voltage level of the driving voltage.
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