发明名称 |
Light emitting diode and method for manufacturing the same |
摘要 |
Provided are a light emitting diode (LED) and a method for manufacturing the same. The LED includes an n-type semiconductor layer, an active layer, and a p-type semiconductor layer. The active layer includes a well layer and a barrier layer that are alternately laminated at least twice. The barrier layer has a thickness at least twice larger than a thickness of the well layer.
|
申请公布号 |
US7868337(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20080136915 |
申请日期 |
2008.06.11 |
申请人 |
SEOUL OPTO DEVICE CO., LTD. |
发明人 |
KIM HWA MOK;OH DUCK HWAN;KIM DAE WON;KAL DAE SUNG |
分类号 |
H01L33/00;H01L33/06;H01L33/32 |
主分类号 |
H01L33/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|