METHOD FOR MANUFACTURING BURIED GATE USING PRE LANDING PLUG

摘要

PURPOSE: A buried gate manufacturing method is provided to reduce contact resistance by increasing a contact area between a bit line contact/storage node contact and a substrate. CONSTITUTION: A plug conductive layer is formed in the front side of a substrate(71). A landing plug(74A) is formed by etching the plug conductive layer. A trench(78) is formed by etching a substrate between the landing plugs. A gate insulating layer is formed on the surface of the trench. A buried gate(80A), which partly fills the trench, is formed on the gate insulating layer.