| 摘要 |
PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent the collapse and short of the storage node by comprising a separation layer which fills in between storage nodes. CONSTITUTION: A sacrificing layer is formed on a substrate equipped with a plurality of plugs(202). A first open area is formed by etching a hard mask pattern covering the area where a storage node is to be formed as the etching wall. A separation layer(203) is formed by filling the first open area with the insulation material.
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