发明名称 |
Method of manufacturing silicon carbide semiconductor device |
摘要 |
A method of manufacturing an SiC semiconductor device includes the steps of ion implanting a dopant at least in a part of a surface of an SiC single crystal, forming an Si film on the surface of the ion-implanted SiC single crystal, and heating the SiC single crystal on which the Si film is formed to a temperature not less than a melting temperature of the Si film.
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申请公布号 |
US7867882(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20070444551 |
申请日期 |
2007.08.13 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIKAWA KAZUHIRO;MASUDA TAKEYOSHI |
分类号 |
H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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