发明名称 |
Temperature control method for photolithographic substrate |
摘要 |
The present invention provides a method for processing a photolithographic substrate, comprising the placement of the photolithographic substrate on a support member in a chamber wherein the photolithographic substrate has an initial temperature of about zero degrees Celsius to about fifty degrees Celsius. A heat transfer fluid is introduced into the chamber to cool the photolithographic substrate to a target temperature of less than about zero degrees Celsius to less than about minus forty degrees Celsius. The cooled photolithographic substrate is subjected to a plasma process before the temperature of the cooled photolithographic substrate reaches the initial temperature.
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申请公布号 |
US7867403(B2) |
申请公布日期 |
2011.01.11 |
申请号 |
US20070756074 |
申请日期 |
2007.05.31 |
申请人 |
PLUMHOFF JASON;RYAN LARRY;NOLAN JOHN;JOHNSON DAVID;WESTERMAN RUSSELL |
发明人 |
PLUMHOFF JASON;RYAN LARRY;NOLAN JOHN;JOHNSON DAVID;WESTERMAN RUSSELL |
分类号 |
B44C1/22;C25F3/00 |
主分类号 |
B44C1/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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