发明名称 Integrated circuit system for suppressing short channel effects
摘要 An integrated circuit system that includes: providing a substrate including an active device with a gate and a gate dielectric; forming a first liner, a first spacer, a second liner, and a second spacer adjacent the gate; forming a material layer over the integrated circuit system; forming an opening between the material layer and the first spacer by removing a portion of the material layer, the second spacer, and the second liner to expose the substrate; and forming a source/drain extension and a halo region through the opening.
申请公布号 US7867835(B2) 申请公布日期 2011.01.11
申请号 US20080040777 申请日期 2008.02.29
申请人 CHARTERED SEMICONDUCTOR MANUFACTURING LTD. 发明人 LEE JAE GON;QUEK ELGIN KIOK BOONE;TEH YOUNG WAY;GAO WENZHI
分类号 H01L27/088 主分类号 H01L27/088
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