发明名称 THE METHOD FOR THE PREPARATION OF GOLD NANOSTRUCTURE USING GALVANIC DISPLACEMENT REACTION AND GOLD NANOSTRUCTURE WITH IMPROVED SURFACE ENHANCED RAMAN SCATTERING
摘要 PURPOSE: A method for manufacturing a gold nanostructure with improved surface-enhanced Raman scattering is provided to manufacture a gold nanostructure of a mushroom shape by depositing gold on a block copolymer through galvanic substitution reaction. CONSTITUTION: A method for manufacturing a gold nanostructure with improved surface-enhanced Raman scattering comprises the steps of: spin-coating PS-b-P2VP reverse micelle on a silicon wafer to manufacture a monomolecular film; treating the monomolecular film in a solvent for selectively dissolving P2VP to obtain a block copolymer template with nanopores; and performing substitution reaction of the block copolymer template to deposit gold.
申请公布号 KR20110003076(A) 申请公布日期 2011.01.11
申请号 KR20090060675 申请日期 2009.07.03
申请人 EWHA UNIVERSITY - INDUSTRY COLLABORATION FOUNDATION 发明人 KIM, DONG HA
分类号 B82B3/00;B82B1/00 主分类号 B82B3/00
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