| 摘要 |
PURPOSE: A semiconductor memory device is provided to improve the reliability of a product in a high temperature and high moisture environment without increasing the cost of additional processes by using power up signals(PWR1, PWR2) and a MOS transistor. CONSTITUTION: One side of a fuse(f) is connected to a repair node(a). A pull down unit(20) selectively transfers the ground voltage with the voltage of the repair node. A pull-up unit(10) selectively transfers the driving voltage to the other side of the fuse. A latch unit(30) latches onto the signal to the repair node. A switch(40) is arranged between the latch unit and the repair node and selectively transfers the signal of the repair node to the latch unit.
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