| 摘要 |
PURPOSE: A semiconductor device and a method for manufacturing the same are provided to control the properties of each transistor by modulating a bias applied to a well region using a fuse trimming technique. CONSTITUTION: An element isolating film(102) separating a plurality of transistor regions is formed on a substrate(101). A well region is formed in surfaces of the substrate at each transistor region. A gate insulating film(104) is interposed in each transistor region to form a gate electrode(105). A source/drain region(108) is formed in the surface of the substrate at both sides of the gate electrode. An interlayer insulating film(109) covers the entire surface of the substrate including the gate electrode.
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