| 发明名称 |
Dual metal interconnects for improved gap-fill, reliability, and reduced capacitance |
| 摘要 |
Embodiments of apparatus and methods for forming dual metal interconnects are described herein. Other embodiments may be described and claimed.
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| 申请公布号 |
US7867891(B2) |
申请公布日期 |
2011.01.11 |
| 申请号 |
US20080316304 |
申请日期 |
2008.12.10 |
| 申请人 |
INTEL CORPORATION |
发明人 |
O'BRIEN KEVIN;AKOLKAR ROHAN;INDUKURI TEJASWI;FAJARDO ARNEL M. |
| 分类号 |
H01L21/4763;H01L21/44 |
主分类号 |
H01L21/4763 |
| 代理机构 |
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