METHOD FOR FORMING COBALT SILICIDE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device cobalt silicide forming method is provided to offer cobalt silicide having the same volume with a first polysilicon layer pattern by forming a second polysilicon layer pattern which is broadly patterned to have bigger volume than the first polysilicon layer pattern. CONSTITUTION: A first poly silicon film pattern(21) is formed on the top of a substrate. An insulating layer(22) is formed on the front including the first poly silicon film pattern. The insulating layer is planarized to expose the surface of the first silicon film pattern. The second polysilicon layer pattern having bigger volume than the first polysilicon layer pattern is formed.