| 摘要 |
PURPOSE: A capacitor forming method of a semiconductor device is provided to implement a higher capacitance in the same area by using a carbon nano tube as a storage node of the capacitor. CONSTITUTION: A graphene seed layer(110) is formed on the top of a substrate(100). The surface energy of the graphene seed layer is increased and the graphene seed layer is implemented with the first plasma process. A graphene(120) is grown up on the graphene seed layer. A nanotube(130) or a nanowire is grown up using graphene as a mask.
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