METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE

摘要

PURPOSE: A semiconductor device manufacturing method is provided to prevent the swelling phenomenon of the back of a radiation fin by separating the semiconductor device using etching. CONSTITUTION: An active layer(42) is formed on a substrate(41). A first metal layer(43) is formed on the first side of the substrate. A radiation fin(45) is formed along a radiation fin forming pattern(44) on the first metal layer. A support layer(46) is formed on the radiation fin forming pattern and the radiation fin.