发明名称 CIRCUIT FOR PRECHARGING A BITLINE OF DRAM
摘要 PURPOSE: A circuit for precharging the bit line of a DRAM is provided to remove the instability of a bit line voltage by supplying a voltage corresponding to a half of the power supply voltage to a bit line pair. CONSTITUTION: A plurality of switches(23-26) are connected between an output node outputting a bit line voltage and a power source. A plurality of capacitors(21, 22) are connected between two adjacent switches and a ground voltage. The voltage of an output node is precharged by a half of a power voltage according to each operation of the plural switches.
申请公布号 KR20110002178(A) 申请公布日期 2011.01.07
申请号 KR20090059635 申请日期 2009.07.01
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, CHEON AN;JANG, SEONG JIN;SON, JONG PIL;HWANG, SANG JOON
分类号 G11C11/4074;G11C11/4094 主分类号 G11C11/4074
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