PURPOSE: A circuit for precharging the bit line of a DRAM is provided to remove the instability of a bit line voltage by supplying a voltage corresponding to a half of the power supply voltage to a bit line pair. CONSTITUTION: A plurality of switches(23-26) are connected between an output node outputting a bit line voltage and a power source. A plurality of capacitors(21, 22) are connected between two adjacent switches and a ground voltage. The voltage of an output node is precharged by a half of a power voltage according to each operation of the plural switches.
申请公布号
KR20110002178(A)
申请公布日期
2011.01.07
申请号
KR20090059635
申请日期
2009.07.01
申请人
SAMSUNG ELECTRONICS CO., LTD.
发明人
LEE, CHEON AN;JANG, SEONG JIN;SON, JONG PIL;HWANG, SANG JOON