发明名称 ESD PROTECTION CIRCUIT
摘要 PURPOSE: An ESD protection circuit is provided to remove introduced ESD rapidly by effectively increasing the driving voltage of an ESD protection circuit using a NAND gate and a PMOS transistor. CONSTITUTION: A RC trigger(120) is formed between a current voltage node and a ground voltage node. An ESD discharge unit(160) grounds the ESD introduced in the current voltage node with the ground voltage node. An ESD driving voltage generator(140) generates the driving voltage of the ESD discharge unit.
申请公布号 KR20110002167(A) 申请公布日期 2011.01.07
申请号 KR20090059619 申请日期 2009.07.01
申请人 DONGBU HITEK CO., LTD. 发明人 SON, YOUNG SANG;KIM, DAE WOO;KIM, JONG MIN
分类号 H01L27/04 主分类号 H01L27/04
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