PHOTOELECTRIC CONVERSION DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A stack including a first electrode, a first impurity semiconductor layer having one conductivity type, an intrinsic semiconductor layer, a second impurity semiconductor layer having an opposite conductivity type to the one conductivity type, and a light-transmitting second electrode is formed over an insulator. The light-transmitting second electrode and the second impurity semiconductor layer have one or more openings. The shortest distance between one portion of the wall of one opening and an opposite portion of the wall of the same opening at the level of the interface between the second impurity semiconductor layer and the intrinsic semiconductor layer is made smaller than the diffusion length of holes in the intrinsic semiconductor layer. Thus, recombination is suppressed, so that more photocarriers are generated due to the openings and taken out as current, whereby conversion efficiency is increased.