| 摘要 |
PROBLEM TO BE SOLVED: To provide an epitaxial wafer for light emitting diode, capable of enhancing efficiency of light emission, suppressing the deterioration of film quality in a current dispersion layer of the epitaxial wafer, and dispersing a current all over the chip.SOLUTION: The epitaxial wafer for AlGaInP system semiconductor light emitting diode has at least an n-type cladding layer, an active layer, and a p-type cladding layer composed of AlGaInP system material, an intermediate layer, and a p-type GaP current dispersion layer formed on an n-type single crystal substrate, wherein the p-type cladding layer is composed of a lower p-type cladding layer having a lattice constant roughly same as that of the n-type single crystal substrate and an upper p-type cladding layer having the lattice constant larger than that of the lower p-type cladding layer. |
