| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface emitting semiconductor laser capable of stabilizing polarization control while maintaining a fundamental lateral mode.SOLUTION: A VCSEL 10 includes an n-type GaAs substrate 100, a lower mesa M2 formed on the substrate, and an upper mesa M1 formed on the lower mesa M2. The upper mesa M1 includes a p-type upper DBR 106, a p-type oxidation control layer 120 and an active layer 104. The lower mesa M2 includes an n-type lower DBR 102 and an n-type oxidation control layer 130. The oxidation control layer 130 is nearer to the active layer 104 than the oxidation control layer 120, and an area of an oxidation region 130A of the oxidation control layer 130 is larger than an area of an oxidation region 120A of the oxidation control layer 120. |
