| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing method where the using amount of an electroless plating liquid can be reduced, further, the influence of reaction by-products caused by plating reaction is suppressed, and a cap metal with a uniform film thickness can be formed in the plane of a substrate.SOLUTION: In the semiconductor manufacturing method, plating treatment is continuously performed to a plurality of substrates, a prescribed amount of plating liquid including a pH adjuster required for one substrate treatment is stored in a vessel for temperature control, the temperature of the plating liquid stored in the vessel for temperature control is controlled to a prescribed temperature in accordance with a plating film deposition rate required for plating treatment and the concentration of a pH adjustor comprised in the plating liquid, the substrates are held to prescribed positions one by one, and, at the timing in accordance with the plating film deposition rate required for plating treatment and the concentration of the pH adjustor comprised in the plating liquid, per held substrate, the whole quantity of the plating liquid stored in the vessel for temperature control and whose temperature is controlled is discharged to the treatment face of the held substrate. |
