发明名称 PHASE CHANGE MEMORY STRUCTURES
摘要 A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.
申请公布号 US2011001113(A1) 申请公布日期 2011.01.06
申请号 US20100881678 申请日期 2010.09.14
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 MURALIDHAR RAMACHANDRAN;MERCHANT TUSHAR P.;RAO RAJESH A.
分类号 H01L45/00 主分类号 H01L45/00
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