发明名称 |
PHASE CHANGE MEMORY STRUCTURES |
摘要 |
A phase change memory cell has a first electrode, a plurality of pillars, and a second electrode. The plurality of pillars are electrically coupled with the first electrode. Each of the pillars comprises a phase change material portion and a heater material portion. The second electrode is electrically coupled to each of the pillars. In some examples, the pillars have a width less than 20 nanometers.
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申请公布号 |
US2011001113(A1) |
申请公布日期 |
2011.01.06 |
申请号 |
US20100881678 |
申请日期 |
2010.09.14 |
申请人 |
FREESCALE SEMICONDUCTOR, INC. |
发明人 |
MURALIDHAR RAMACHANDRAN;MERCHANT TUSHAR P.;RAO RAJESH A. |
分类号 |
H01L45/00 |
主分类号 |
H01L45/00 |
代理机构 |
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