| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for leveling an interlayer insulating film which facilitates leveling by excluding an effect of unevenness of the interlayer insulating film caused by a wiring layer.SOLUTION: In the method for leveling the interlayer insulating film, first, wiring layers 12a and 12b are formed, the wiring layers 12a and 12b are coated by a high density plasma CVD to form a first HDP oxide film 13, a PL-TEOS oxide film 14 is formed on the first HDP oxide film 13 by the plasma CVD using tetraethoxy silane gas, and a second HDP oxide film 15 is formed on the PL-TEOS oxide film 14 by the high density plasma CVD. Secondly, the second HDP oxide film 15 is polished by a CMP until the PL-TEOS oxide film 14 is exposed. Until the PL-TEOS oxide film 14 is removed, the second HDP oxide film 15 and the PL-TEOS oxide film 14 are simultaneously leveled by the CMP. By so doing, it is possible to attain a leveled interlayer insulating film 10. |
