发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND SUBSTRATE PROCESSING SYSTEM |
摘要 |
Provided is a method of manufacturing a semiconductor device. In the method, an aluminium-containing insulation film is formed on an electrode film of a substrate by alternately repeating a process of supplying an aluminium precursor into a processing chamber in which the substrate is accommodated and exhausting the aluminium precursor from the processing chamber and a process of supplying an oxidizing or nitriding precursor into the processing chamber and exhausting the oxidizing or nitriding precursor from the processing chamber; and a high permittivity insulation film different from the aluminium-containing insulation film is formed on the aluminium-containing insulation film by alternately repeating a process of supplying a precursor into the processing chamber and exhausting the precursor from the processing chamber and a process of supplying an oxidizing precursor into the processing chamber and exhausting the oxidizing precursor from the processing chamber. In addition, heat treatment is performed on the substrate.
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申请公布号 |
US2011003482(A1) |
申请公布日期 |
2011.01.06 |
申请号 |
US20100825012 |
申请日期 |
2010.06.28 |
申请人 |
HITACHI-KOKUSAI ELECTRIC INC. |
发明人 |
OGAWA ARITO;HORII SADAYOSHI;SATO TAKETOSHI;ITATANI HIDEHARU;MISE NOBUYUKI;TONOMURA OSAMU |
分类号 |
H01L21/314;B05C11/10 |
主分类号 |
H01L21/314 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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