发明名称 |
METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING LANDING PADS FORMED BY ELECTROLESS PLATING |
摘要 |
A semiconductor device in which an increase of contact resistance Rc between a metal contact and a plug due to misalignment between the metal contact and the plug can be reduced and the difficulty of a Cu filling process during the process of forming the plug may be reduced. The semiconductor device includes a substrate including an active area and a device isolation layer; a metal contact that is formed on the substrate and is electrically connected to the active area; a landing pad formed on the metal contact by electroless plating; and a plug that is formed on the landing pad and is electrically connected to the metal contact via the landing pad.
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申请公布号 |
US2011003476(A1) |
申请公布日期 |
2011.01.06 |
申请号 |
US20100829776 |
申请日期 |
2010.07.02 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
YUN JONG-HO;CHOI GIL-HEYUN;LEE JONG-MYEONG |
分类号 |
H01L21/768 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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