发明名称 METHODS OF FORMING SEMICONDUCTOR DEVICES INCLUDING LANDING PADS FORMED BY ELECTROLESS PLATING
摘要 A semiconductor device in which an increase of contact resistance Rc between a metal contact and a plug due to misalignment between the metal contact and the plug can be reduced and the difficulty of a Cu filling process during the process of forming the plug may be reduced. The semiconductor device includes a substrate including an active area and a device isolation layer; a metal contact that is formed on the substrate and is electrically connected to the active area; a landing pad formed on the metal contact by electroless plating; and a plug that is formed on the landing pad and is electrically connected to the metal contact via the landing pad.
申请公布号 US2011003476(A1) 申请公布日期 2011.01.06
申请号 US20100829776 申请日期 2010.07.02
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 YUN JONG-HO;CHOI GIL-HEYUN;LEE JONG-MYEONG
分类号 H01L21/768 主分类号 H01L21/768
代理机构 代理人
主权项
地址