METHOD FOR MANUFACTURING SILICON STRUCTURE, DEVICE FOR MANUFACTURING SAME, AND PROGRAM FOR MANUFACTURING SAME
摘要
<p>A method for manufacturing a silicon structure comprises a step for etching a silicon region of an object to be processed that includes the silicon region by alternately repeating a first step for converting first iodine fluoride as an etching gas into plasma by applying first high-frequency power and a second step for converting second iodine fluoride as a protective film forming gas into plasma by applying second high-frequency power lower than the first high-frequency power. As a result, a silicon structure having high perpendicularity and a good sidewall shape can be obtained by anisotropic dry etching of silicon which exerts less influence on global warming.</p>
