| 摘要 |
<p>PURPOSE: A fuse structure for a high integrated semiconductor device is provided to improve the reliability of the operation of a semiconductor device by preventing the materials comprising a fuse from moving after a blowing process. CONSTITUTION: A plurality of recesses are formed by etching a first insulation layer. A second insulating layer is deposited on the structure including a plurality of recesses. A trench to expose the plurality of recesses is formed by etching the second insulating layer. A fuse(314) is formed by filing conducive materials in the trench and the plurality of recesses.</p> |
