| 发明名称 |
SEMICONDUCTOR DEVICE WITH BURIED GATE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
<p>PURPOSE: A semiconductor device and a manufacturing method thereof are provided to form a buried gate which includes a sealing insulation layer without a void. CONSTITUTION: A trench is formed on a substrate(201). A buried gate fills a part of the trench. A first sealing insulation layer is formed on the buried gate. The first sealing insulation layer has a positive profile void in the entrance of the trench.</p> |
| 申请公布号 |
KR20110001568(A) |
申请公布日期 |
2011.01.06 |
| 申请号 |
KR20090059144 |
申请日期 |
2009.06.30 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, SEUNG MI;HWANG, SUN HWAN |
| 分类号 |
H01L29/78;H01L21/31 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
