| 摘要 |
PURPOSE: A nonvolatile memory device and a reading method thereof are provided to improve the reliability of a read operation by compensating the distribution change of a threshold voltage due to the interference in a program operation. CONSTITUTION: A memory cell array(200) comprises a first bit line and a second bit line. A first page buffer is connected to the first and second bit lines. A second page buffer(240) is connected to the first and second bit lines and is connected in parallel with the first page buffer. A first bit line selection unit(210) is connected between the first and second bit lines and a fist sensing node to select one of the first and second bit lines.
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