| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light receiving device capable of securing superior response speed for a high incident light power, and to provide a method for manufacturing the device.SOLUTION: An n-type epitaxial layer 5 is formed on a semiconductor substrate 20. A p-type low concentration diffusion layer 7 and a p-type high concentration diffusion layer 8 penetrating through the n-type epitaxial layer 5 to get the semiconductor substrate 20 are formed. An n-type low concentration diffusion layer 9 is formed in facing to the p-type low concentration diffusion layer 7 and the p-type high concentration diffusion layer 8 through the n-type epitaxial layer 5. An n-type high concentration diffusion layer 10 is formed facing to the p-type low-concentration diffusion layer 7, the p-type high concentration diffusion layer 8, and the semiconductor substrate 20 through the n-type epitaxial layer 5 and the n-type low concentration diffusion layer 9. The n-type high concentration diffusion layer 10 has an impurity concentration higher than that of the n-type low concentration diffusion layer 9. An anode electrode 12 is formed on a p-type diffusion layer 4 and a cathode electrode 13 is formed on the n-type high concentration diffusion layer 10 at the outer side of the light-receiving region. |
