| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride semiconductor laser element having a laser resonator capable of having a low threshold current on a semipolar surface of a support base body in which a c-axis of hexagonal group III nitride is tilted toward an m-axis.SOLUTION: First and second fractured faces 27, 29 to form the laser cavity intersect with an m-n plane. The group III nitride semiconductor laser element 11 has a laser waveguide extending in a direction of a line of intersection between the m-n plane and the semipolar plane 17a. For this reason, it is feasible to make use of emission by a band transition enabling the low threshold current. In a laser structure 13, a first surface 13a is opposite to a second surface 13b. The first and second fractured faces 27, 29 extend from an edge 13c of the first surface 13a to an edge 13d of the second surface 13b. The fractured faces 27, 29 are not formed by dry etching and are different from conventionally-employed cleaved facets such as c-planes, m-planes, or a-planes. |
