SEMICONDUCTOR COMPRISING RECESS GATE AND METHOD OF FORMING THE SAME

摘要

PURPOSE: A semiconductor device including a recess gate and a method for forming the same are provided to improve the operational yield of a recess gate by preventing the generation of a bridge phenomenon between recess gates. CONSTITUTION: An element isolation film(20) defines an active area in a semiconductor substrate(10). The element isolation film includes an oxide film. A dummy active region(12) is formed at one end of the cell region in the semiconductor substrate. A gate structure(30) is formed in the semiconductor substrate. The end part(35) of the gate structure is formed in the dummy active region.