| 摘要 |
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus capable of supporting a substrate supporting base without uneven exhausting and in easy maintenability, and to provide a plasma processing method.SOLUTION: The plasma CVD apparatus 10 includes in its inside a through-hole 12c penetrating the side wall 11a of an opposite vacuum chamber 11, and a supporting beams 12 crossing through the center of the vacuum chamber 11 is formed integral with the vacuum chamber 11. An upper surface opening 12a is provided at the central section of the upper surface of the supporting beam 12 to fit a substrate supporting base 13, and a cylindrical substrate supporting base 13 is fitted to the upper surface opening 12a by means of a first sealing member for sealing the vacuum side and the atmosphere side. |
