| 摘要 |
PROBLEM TO BE SOLVED: To provide a power semiconductor element of a superjunction structure having high avalanche resistance.SOLUTION: The power semiconductor element is equipped with: an ndrain layer 2; an n pillar layer 3 and a p pillar layer 4 that are formed cyclically in the horizontal direction; a drain electrode 1; a p base layer 5 formed selectively on the surfaces of the p pillar layer 4; a pcontact layer 6 higher in impurity concentration than the p base layer 5; an n source layer 7; a source electrode 10; and a gate electrode 9 formed via a gate insulating film 8. On a counter portion of a pair of adjacent p base layers 5, a distance from one pcontact layer 6 in one p base layer 5 to an end of one p base layer 5 is shorter than that from the other pcontact layer 6 in the other p base layer 5 to an end of the other p base layer 5. |
