| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that the driving force of a semiconductor device having a relatively high threshold voltage is lowered, when an impurity concentration in a channel region for the semiconductor device having the relatively high threshold voltage is set higher than that in the channel region for the semiconductor device having a relatively low threshold voltage.SOLUTION: The semiconductor device includes a first transistor and a second transistor. The first transistor includes a first channel region 3a, a first gate insulating film 4a, a first gate electrode 5a and a first extension region 8a. The second transistor has the threshold voltage higher than the first transistor and includes a second channel region 3b, a second gate insulating film 4b, a second gate electrode 5b and a second extension region 8b. The second extension region 8b contains shallow-jujnction-formed impurities, and the junction depth of the second extension region 8b is shallower than that of the first extension region 8a. |
