发明名称 |
REDUCED DEFECT SEMICONDUCTOR-ON-INSULATOR HETERO-STRUCTURES |
摘要 |
A semiconductor-on-insulator hetero-structure and a method for fabricating the semiconductor-on-insulator hetero-structure include a crystalline substrate and a dielectric layer located thereupon having an aperture that exposes the crystalline substrate. The semiconductor-on-insulator hetero-structure and the method for fabricating the semiconductor-on-insulator hetero-structure also include a semiconductor layer of composition different than the crystalline substrate located within the aperture and upon the dielectric layer. A portion of the semiconductor layer located aligned over the aperture includes a defect. A portion of the semiconductor layer located aligned over the dielectric layer does not include a defect. Upon removing the portion of the semiconductor layer located aligned over the aperture a reduced defect semiconductor-on-insulator hetero-structure is formed.
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申请公布号 |
US2011001167(A1) |
申请公布日期 |
2011.01.06 |
申请号 |
US20090496006 |
申请日期 |
2009.07.01 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
BEDELL STEPHEN W.;KIM JEEHWAN;REZNICEK ALEXANDER;SADANA DEVENDRA K. |
分类号 |
H01L29/267;H01L21/20;H01L29/161;H01L29/165 |
主分类号 |
H01L29/267 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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