发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME |
摘要 |
A semiconductor device with high reliability and operation performance is manufactured without increasing the number of manufacture steps. A gate electrode has a laminate structure. A TFT having a low concentration impurity region that overlaps the gate electrode or a TFT having a low concentration impurity region that does not overlap the gate electrode is chosen for a circuit in accordance with the function of the circuit.
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申请公布号 |
US2011001140(A1) |
申请公布日期 |
2011.01.06 |
申请号 |
US20100878221 |
申请日期 |
2010.09.09 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
FUJIMOTO ETSUKO;MURAKAMI SATOSHI;YAMAZAKI SHUNPEI;EGUCHI SHINGO |
分类号 |
H01L29/739;H01L21/77;H01L21/84;H01L27/12;H01L29/423;H01L29/786 |
主分类号 |
H01L29/739 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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