SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME

摘要

PURPOSE: A semiconductor device and a forming method thereof are provided to improve contact resistance by widening a contact area between an active region and a storage electrode contact. CONSTITUTION: A buried gate(160) is formed on a semiconductor substrate including an active region(154). An insulation layer is formed on the front of the semiconductor substrate. The insulation layer is selectively removed from the upper side of the active region. A bit line is formed on the upper side of the buried gate formed on the active region. A storage electrode contact is adjacent to the bit line and the lower side of the storage electrode contact is formed.