摘要 |
Disclosed are a ReRAM, which is a non-volatile memory device, and a production method therefor. A resistance-variable layer, which varies the resistance in accordance with an applied pulse, has a multilayered structure comprising 3 oxide films. Each oxide film consists of an oxide film of the same type as the neighbouring oxide film(s), but the oxygen ratios in the compositions of neighbouring oxide films differ from each other. |
申请人 |
INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY;HONG, JIN PYO;DO, YOUNG HO;KWAK, JUNE-SIK;BAE, YOON CHEOL |
发明人 |
HONG, JIN PYO;DO, YOUNG HO;KWAK, JUNE-SIK;BAE, YOON CHEOL |