GROUP III NITRIDE CRYSTAL AND PRODUCTION METHOD THEREOF

摘要

Provided is a method for producing a group III nitride crystal in which a highly crystalline group III nitride crystal provided with principal surfaces that have an orientation other than {0001} is grown at a high crystal growth speed. The method for producing a group III nitride crystal involves a process for cutting out a plurality of group III nitride crystal substrates (10p, 10q) provided with principal surfaces (10pm, 10qm) that have an orientation with an off-angle of no more than 5° in relation to a crystal geometric equivalent orientation selected either from a group III nitride bulk crystal (1) or from a group comprising {20-21}, {20-2-1}, {22-41}, and {22-4-1}; a process for adjoining together and disposing the substrates (10p, 10q) in a transverse direction in a manner such that the principal surfaces (10pm, 10qm) of the substrates (10p, 10q) are mutually parallel, and such that the [0001] directions of the substrates (10p, 10q) are identical; and a process for growing the group III nitride crystal (20) upon the principal surfaces (10pm, 10qm) of the substrates (10p, 10q).