SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

There is a problem of deterioration of electrical characteristics of a wiring due to moisture absorption in a large area of an interlayer insulating film composed of a low-k material, at the time of forming a silicon through electrode from the rear surface of a silicon substrate (a surface having no semiconductor device formed thereon).  Such problem is solved by forming, in the low-k material layer which the silicon through electrode penetrates, at least a single ring-like enclosure laid out to enclose the silicon through electrode by using a plurality of layers of metal wirings and a connecting via which connects the upper and the lower metal wirings, and by forming a water barrier film composed of at least the metal wiring and the connecting via, between the silicon through electrode and the circuit wiring formed at the vicinity of the silicon through electrode.