| 摘要 |
<p>Provided is a method for forming a thin film, which is capable of increasing the deposition rate of the thin film on a substrate and efficiently depositing the thin film on the bottom surfaces of a trench and a via hole. Specifically provided is a deposition method for depositing, in a processing chamber that can be evacuated, a thin film on a substrate having a trench or a via hole that is a step having an opening width or opening diameter of 3 µm or less and an aspect ratio of 1 or more. The deposition method comprises a step for disposing the substrate having the trench or the via hole on a first electrode provided in the processing chamber, and a step for introducing processing gas containing Ne into the processing chamber, supplying high-frequency power for plasma formation to either the first electrode and/or a second electrode disposed so as to face the first electrode, and generating a cusped magnetic field on the second electrode to thereby generate plasma, sputtering a target, and depositing a target substance produced by the sputtering on the substrate having the trench or the via hole.</p> |
