发明名称 SOLID-STATE IMAGING APPARATUS, AND METHOD FOR MANUFACTURING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a solid-state imaging apparatus capable of miniaturizing a pixel by improving an optical characteristic such as light crosstalk in the pixel.SOLUTION: This solid-state imaging apparatus includes: a plurality of photoelectric conversion elements (11) arranged on a semiconductor substrate for converting light to charge; a first semiconductor region (13) arranged on the semiconductor substrate for converting the charge obtained by the conversion of the photoelectric conversion element to voltage; an amplifying MOS transistor having a gate electrode connected to the first semiconductor region for amplifying the voltage obtained by the conversion of the first semiconductor region; an insulation film (23) covering the semiconductor substrate; a metal wiring layer (42) arranged on the insulation film; a first conductive body (21) for connecting the first semiconductor region to the gate electrode of the amplifying MOS transistor without interposing the metal wiring layer; a second semiconductor region (18) arranged on the semiconductor substrate and different from the first semiconductor region; and a second conductive body for connecting the second semiconductor region to at least a part of the metal wiring layer.
申请公布号 JP2011003738(A) 申请公布日期 2011.01.06
申请号 JP20090145698 申请日期 2009.06.18
申请人 CANON INC 发明人 OKAGAWA TAKASHI
分类号 H01L27/146;H01L21/3205;H01L23/52 主分类号 H01L27/146
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