| 摘要 |
PROBLEM TO BE SOLVED: To provide a high-reliability semiconductor device, and to provide a method of manufacturing the same.SOLUTION: This semiconductor device includes: a semiconductor substrate; a semiconductor element formed on a first surface side of the semiconductor substrate; a wiring layer formed on the first surface side of the semiconductor substrate and having wiring electrically connected to the semiconductor element; an electrode pad part formed on the first surface side of the semiconductor substrate; and a penetration electrode formed in a through-hole penetrating from the first surface of the semiconductor substrate to a second surface on the side opposite to it. In the semiconductor device, the electrode pad part includes a single conductive layer partially laminated on the first surface of the semiconductor substrate, and a hybrid conductive layer laminated on the single conductive layer; the single conductive layer is composed of a conductive region portion electrically connected to the penetration electrode; and the hybrid conductive layer is composed by mixedly forming a conductive region portion for electrically connecting the single conductive layer to the wiring with an insulation region portion for electrically insulating the single conductive layer from the wiring. |
